Scalable Hard-mask materials with Improved Etch resistance and Low Degradation for Extreme-aspect-Ratio fabrication (SHIELDER)

Description: This STTR Direct to Phase II topic seeks novel nanofabrication hard-mask materials with substantially improved plasma-etch resistance for extreme high-aspect-ratio structures, while preserving pattern-transfer fidelity, low sidewall roughness, and precise dimensional control. It targets scalable fabrication for semiconductor, photonic, MEMS, and quantum-device platforms and calls for evidence addressing etch selectivity, aspect ratio, critical-dimension control, throughput, and wafer-scale compatibility. The opportunity is a research BAA rather than a grant program, with a $1,500,000 base award for 24 months and a $450,000 option for 12 months.