Summary
Acquiring an atomic layer deposition (ald) reactor system for growth of thin films atop various substrates. The document describes the minimum technical requirements and minimum acceptable performance standards for the system. Atomic layer deposition is implemented as a vapor transport of precursor materials from source containers to samples mounted on a temperature-controlled stage. Adhesion of the vapor to the sample surface occurs with 1 molecule thickness, and temperature and/or plasma processes convert the adsorbed carrier molecule to the final film product with residual carrier components pumped away, followed by a new cycle of vapor injection, deposition, reaction and pumping that is repeated until desired film thickness is achieved. The tool will be placed in a multiple user facility and must provide ease of operation and safety to those in the facility. It must be capable of uniform deposition on various sized substrates and wafers of 150 mm dia or greater. The reactor must implement gas diffusion barrier design to keep particulates away from the sample loading area, to focus the precursor at the sample surface, and to eliminate the need of internal mechanically actuated components. The reactor should accommodate a minimum of 8 precursor sources with the ability to upgrade to 12 precursor sources and configured with 4 (minimum) process gas lines. The reactor should have optical view ports and mounts for use of an nrl-provided ellipsometer for real-time analysis of deposited films. Furthermore, the ald reactor and the ellipsometer should be computer controlled from a single workstation and the reactor should have an integral safety interlock system. See attached file.